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| SSG4565 Elektronische Bauelemente N Channel 7.6A, 40V,RDS(ON) 25m[ P Channel 6.5A, 40V,RDS(ON) 33m [ Enhancement Mode Power Mos.FET RoHS Compliant Product SOP-8 Description 0.40 0.90 0.19 0.25 The SSG4565 provide the designer with the best combination of fast switching, ruggedized device design, Ultra low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters. 0.35 0.49 1.27Typ. 45 6.20 5.80 0.25 o 0.375 REF 3.80 4.00 4.80 5.00 0.10~0.25 Features * Simple Drive Requirement * Lower On-resistance D1 8 D1 7 D2 6 D2 5 D1 0 o 8 o 1.35 1.75 Dimensions in millimeters * Fast Switching Performance Date Code D2 4565SS G1 G2 1 S1 2 G1 3 S2 4 G2 S1 S2 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage www..com Continuous Drain Current 3 Continuous Drain Current Pulsed Drain Current 1 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings N-Channel P-Channel 40 20 7.6 6 30 2 0.016 Unit V V A A A W W/ C o o -40 _ +20 -6.5 -5.2 -30 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Rthj-a Ratings 62.5 o Unit C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 7 SSG4565 Elektronische Bauelemente N Channel 7.6A, 40V,RDS(ON) 25m [ P Channel 6.5A, 40V,RDS(ON) 33m [ Enhancement Mode Power Mos.FET o Electrical Characteristics N- Channel (Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 oC) Drain-Source Leakage Current (Tj=70 oC) Static Drain-Source On-Resistance 2 2 Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. 40 _ Typ. _ Max. _ _ Unit V V/ oC V nA uA uA Test Condition VGS=0V, ID=250uA Reference to 25 oC,ID=1mA VDS=VGS, ID=250uA VGS= 20V VDS=40V,VGS=0 VDS=32V,VGS=0 VGS=10V, ID=7A VGS=4.5V, ID=5A 0.03 _ _ _ _ _ _ 1.0 _ _ _ _ 3.0 100 1 25 25 32 27 _ _ RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ _ m[ Total Gate Charge 17 4 10 11 8 30 11 1400 250 170 12 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time www..com 2 nC ID=7A VDS=32V VGS=4.5V _ _ _ _ VDD=20V ID=1A nS VGS=10V RG=3.3[ RD=20 [ Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance 2400 _ _ pF VGS=0V VDS=25V f=1.0MHz _ _ S VDS=10V, ID=7A Source-Drain Diode Parameter Forward On Voltage 2 Symbol VSD Min. _ _ Typ. _ Max. 1.2 _ Unit V Test Condition IS=1.7A, VGS=0V. Is=7A, VGS=0V dl/dt=100A/us Reverse Recovery Time 2 Trr Qrr 26 ns Reverse Recovery Charge _ 21 _ nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse widthO 300us, dutycycleO2%. 3.Surface mounted on 1 inch2 copper pad of FR4 board; 270C/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 7 SSG4565 Elektronische Bauelemente N Channel 7.6A, 40V,RDS(ON) 25m[ P Channel 6.5A, 40V,RDS(ON) 33m [ Enhancement Mode Power Mos.FET o Electrical Characteristics P-Channel( Tj=25 C Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 oC) Static Drain-Source On-Resistance 2 o Unless otherwise specified) Typ. _ Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. -40 _ Max. _ _ Unit V V/ C V nA uA uA o Test Condition VGS=0V, ID=-250uA Reference to 25 C ,ID=-1mA VDS=VGS, ID=-250uA VGS= 20V VDS=-40V,VGS=0 VDS=-32V,VGS=0 VGS=-10V, ID=-6A VGS=-4.5V, ID=-4A o -0.03 _ _ _ _ _ _ -1.0 _ _ _ _ -3.0 100 -1 -25 33 42 32 _ _ RDS(ON) Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ _ m[ Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time www..com Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance 20 4 10 11 7 67 43 1440 250 190 10 nC ID=-6A VDS=-32V VGS=-4.5V _ _ _ _ VDS=-20V ID=-1A nS VGS=-10V RG=3.3 [ RD=20[ 2300 _ _ pF VGS=0V VDS=-25V f=1.0MHz _ _ S VDS=-10V, ID=-6A Source-Drain Diode Parameter Forward On Voltage 2 Reverse Recovery Time 2 Symbol VSD Trr Qrr Min. _ _ Typ. _ Max. -1.2 _ _ Unit V Test Condition IS=-1.7A, VGS=0V. Is=-6A, VGS=0V dl/dt=100A/us 27 23 ns Reverse Recovery Charge _ nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse widthO 300us, dutycycleO2%. 3.Surface mounted on 1 inch2 copper pad of FR4 board; 270C/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 7 SSG4565 Elektronische Bauelemente N Channel 7.6A, 40V,RDS(ON) 25m[ P Channel 6.5A, 40V,RDS(ON) 33m[ Enhancement Mode Power Mos.FET Characteristics Curve N-Channel Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics www..com Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 7 SSG4565 Elektronische Bauelemente N Channel 7.6A, 40V,RDS(ON) 25m[ P Channel 6.5A, 40V,RDS(ON) 33m[ Enhancement Mode Power Mos.FET N-Channel Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics www..com Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform http://www.SeCoSGmbH.com/ Fig 12. Gate Charge Waveform Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 5 of 7 SSG4565 Elektronische Bauelemente N Channel 7.6A, 40V,RDS(ON) 25m[ P Channel 6.5A, 40V,RDS(ON) 33m[ Enhancement Mode Power Mos.FET P-Channel Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics www..com Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 6 of 7 SSG4565 Elektronische Bauelemente N Channel 7.6A, 40V,RDS(ON) 25m[ P Channel 6.5A, 40V,RDS(ON) 33m [ Enhancement Mode Power Mos.FET P-Channel Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics www..com Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform http://www.SeCoSGmbH.com/ Fig 12. Gate Charge Waveform Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 7of 7 |
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